參數(shù)資料
型號: HYB18H512321BF
廠商: QIMONDA
英文描述: 512-Mbit GDDR3 Graphics RAM
中文描述: 512兆GDDR3顯卡內(nèi)存
文件頁數(shù): 31/43頁
文件大?。?/td> 1344K
代理商: HYB18H512321BF
HYB18H512321BF
512-Mbit GDDR3
Internet Data Sheet
Rev. 1.1, 2007-09
05292007-WAU2-UU95
31
5.10
Operating Currents
5.10.1
Operating Current Ratings for HYB18H512321BF
TABLE 20
Operating Current Ratings ( 0 °C
T
c
85 °C)
Parameter
Symbol
Values
Unit
Note
-8
–10
–11
–12
–14
Typ
Typ.
Typ.
Typ.
Typ.
Operating Current
Operating Current
Precharge Power-Down Standby Current
Precharge Floating Standby Current
Precharge Quiet Standby Current
Active Power-Down Standy Current
Active Standby Current
Operating Current Burst Read
Operating Current Burst Write
Auto-Refresh Current (
t
RC
=min(
t
RFC
))
Auto-Refresh Current at t
REFI
Self Refresh Current
Operating Current
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5B
I
DD5D
I
DD6
I
DD7
630
705
415
470
505
410
585
885
890
740
520
8
920
580
650
380
440
450
380
540
810
800
700
475
8
860
535
600
350
410
400
350
500
740
720
660
435
8
800
500
540
315
380
350
320
460
670
660
620
400
8
740
435
415
235
310
275
235
395
575
565
535
350
8
680
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1)2)3)
1) IDD specifications are tested after the device is properly initialized.
2) Input slew rate = 3 V/ns.
3) Measured with Output open and On Die termination off.
4) Enables on-chip refresh and address counter.
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)
1)2)3)4)
1)2)3)
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