參數(shù)資料
型號: HYB18T1G160AFL-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 7/89頁
文件大小: 1752K
代理商: HYB18T1G160AFL-3
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 7 Rev. 1.02 May 2004
1.4.2 Package Pinout for x8 components, 60 pins + 8 support pins, FBGA-68 Package (top view)
1
2
3
7
8
9
NC
NC
A
NC
NC
B
C
D
VDD
NU,
RDQS
VSS
E
VSSQ
DQS
VDDQ
DQ6
VSSQ
DM,
RDQS
F
DQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
G
VDDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
H
DQ2
VSSQ
DQ5
VDDL
VREF
VSS
J
VSSDL
CK
VDD
CKE
WE
K
RAS
CK
ODT
BA2
BA0
BA1
L
CAS
CS
A10
A1
M
A2
A0
VDD
VSS
A3
A5
N
A6
A4
A7
A9
P
A11
A8
VSS
VDD
A12
NC,(A14)
R
NC,(A15)
A13
T
U
V
NC
NC
W
NC
NC
Notes:
1) RDQS / RDQS are enabled by EMRS(1) command.
2) If RDQS / RDQS is enabled, the DM function is disabled
3) When enabled, RDQS & RDQS are used as strobe signals during reads.
4) VDDL and VSSDL are power and ground for the DLL. They are isolated on the
device from VDD, VDDQ, VSS and VSSQ.
5) NC,(A14) and NC,(A15) are additional address pins for future generation DRAMs
and are not connected on this component.
相關(guān)PDF資料
PDF描述
HYB18T1G400AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3S 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-3S 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-5 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G400AF-3.7 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA
HYB18T1G400AF-5 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA