參數(shù)資料
型號(hào): HYB18T1G160AFL-3S
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 20/89頁
文件大小: 1752K
代理商: HYB18T1G160AFL-3S
Page 20 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
2.3 Off-Chip Driver (OCD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature and the flow chart below is an example of the sequence. Every
calibration mode command should be followed by “OCD calibration mode exit” before any other command being
issued. MRS should be set before entering OCD impedance adjustment and ODT (On Die Termination) should be
carefully controlled depending on system environment.
Start
EMRS: Drive(1)
DQ & DQS High; DQSLow
Test
EMRS :
Enter Adjus t Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: Drive(0)
DQ & DQS Low; DQSHigh
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
End
ALL OK
ALL OK
Need Calibration
EMRS: OCD calibration mode exit
MRS should be set before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
Need Calibration
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