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參數(shù)資料
| 型號： | HYB18T1G160AFL-3S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 1 Gbit DDR2 SDRAM |
| 中文描述： | 1千兆位DDR2內(nèi)存 |
| 文件頁數(shù)： | 63/89頁 |
| 文件大?。?/td> | 1752K |
| 代理商： | HYB18T1G160AFL-3S |
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HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 63 Rev. 1.02 May 2004
4. Operating Conditions
4.1 Absolute Maximum Ratings
4.2 DRAM Component Operating Temperature Range
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
-1.0 to + 2.3
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
-0.5 to + 2.3
V
1
VDDL
Voltage on VDDL pin relative to VSS
-0.5 to + 2.3
V
1
VIN, VOUT Voltage on any pin relative to VSS
-0.5 to + 2.3
V
1
TSTG
Storage Temperature
-55 to + 100
°
C
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
o
C
1 ~ 4
1. Operating Temperature is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the
DRAM case temperature must be maintained between 0 - 95
o
C under all other specification parameters.
3. Some application may require to operate the DRAM up to 95
o
C case temperature. In this case above 85
o
C case temperature the
Auto-Refresh command interval has to be reduced to tREFI = 3.9 μs.
4. Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below 85
o
C case
temperature before initiating self-refresh operation.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T1G400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA |
| HYB18T1G400AF-5 | 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68 |
| HYB18T1G800BF-3S | 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF) |
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
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