參數(shù)資料
型號: HYB18T1G400AFL-37
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 10/89頁
文件大?。?/td> 1752K
代理商: HYB18T1G400AFL-37
Page 10 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
1.6 Block Diagrams
Block Diagram 64Mbit x 4 I/O x 4 Internal Memory Banks,
(128 Mbit x 4 Organisation with 14 Row, 3 Bank and 12 Column External Addresses)
R
2
DQS
DQS
CK, CK
DLL
RAS
AP
CAS
CK
CS
WE
CK
C
Column-Address
Counter/Latch
Mode
Registers
11
C
D
A0-A13,
BA0-BA2
CKE
17
17
I/O Gating
DM Mask Logic
Bank0
Memory
Array
(16384 x 512 x 16)
Sense Amplifiers
Bank0
Bank1
Bank7
17
9
2
2
2
R
4
4
4
4
4
Input
Register
1
1
1
1
1
16
16
4
16
Data
Mask
Data
CK,
CK
COL0,1
COL0,1
COL0,1
M
GDQS
1
1
4
16
DQ0-DQ3,
DM
DQS
DQS
R
Write
FIFO
&
Drivers
Column
Decoder
512
(x16)
R
1
8
B
R
&
16384
A
D
B
1
1
4
4
4
4
4
4
4
4
17
8
8
Note:
This Functional Block Diagram is intended to facilitate user understanding of the operation of
the device; it does not represent an actual circuit implementation.
Note:
DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-
rectional DQ and DQS signals.
相關(guān)PDF資料
PDF描述
HYB18T1G160AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3S 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-3S 1 Gbit DDR2 SDRAM
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