參數(shù)資料
型號: HYB18T1G800AF-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 12/89頁
文件大?。?/td> 1752K
代理商: HYB18T1G800AF-3
Page 12 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
Block Diagram 16Mbit x 16 I/O x 4 Internal Memory Banks
(32Mb x 16 Organisation with 13 Row, 3 Bank and 11 Column External Addresses)
RAS
AP
CAS
CK
CS
WE
CK
C
Column-Address
Counter/Latch
Mode
Registers
10
C
D
A0-A12,
BA0-BA2
CKE
16
I/O Gating
DM Mask Logic
Bank0
Memory
Array
(8192 x 256 x 64)
Sense Amplifiers
Bank1Bank2
Bank7
16
8
2
2
2
R
64
COL0
LDQ0-LDQ7
LDM
UDQ0-UDQ7
UDM
LDQS
LDQS
UDQS
UDQS
Column
Decoder
256
R
1
1
B
R
&
8192
A
B
16
R
1
DQS
DQS
CK, CK
DLL
16
16
16
16
16
Input
Register
2
2
2
2
2
64
8
64
Data
Mask
Data
CK,
CK
COL0,1
COL0,1
M
GDQS
2
2
16
64
R
Write
FIFO
Dr&
D
2
2
16
16
16
16
16
16
16
16
16
8
8
Note:
This Functional Block Diagram is intended to facilitate user understanding of the operation
of the device; it does not represent an actual circuit implementation.
Note:
DM is a unidirectional signal (input only), but is internally loaded to match the load of the
相關(guān)PDF資料
PDF描述
HYB18T1G800AF-37 1 Gbit DDR2 SDRAM
HYB18T1G800AF-3S POT 1.0K OHM 1/4 SQ CERM SL ST
HYB18T1G800AF-5 1 Gbit DDR2 SDRAM
HYB18T1G800AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G800AFL-37 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA