參數(shù)資料
型號(hào)： HYB18T1G800AF-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 1 Gbit DDR2 SDRAM
中文描述： 1千兆位DDR2內(nèi)存
文件頁(yè)數(shù)： 89/89頁(yè)
文件大小： 1752K
代理商： HYB18T1G800AF-3
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 89 Rev. 1.02 May 2004
Content
5. AC & DC Operation Conditions
5.1 DC Operation Conditions
5.1.1 Recommended DC Operation Conditions
5.1.2 ODT DC Operation Conditions
5.1.3 Input and Output Leakage Current
5.2 DC & AC Logic Input Levels
5.2.1 Single-ended DC & AC Logic Input Levels
5.2.2 Single-ended AC Input Test Conditions
5.2.3 Differential DC and AC Input and Output Logic Levels
5.3 Output Buffer Levels
5.31 Output AC Test Conditions
5.3.2 Output DC Current Drive
5.3.5 Full Strength Pull-up Driver Characteristics
5.3.6 Full Strength Pull-down Driver Characteristics
5.3.7 Calibrated Output Driver V-I Characteristics
5.4 Input/Output Capacitances
5.5 Power & Ground Clamp V-I Characteristics
6. IDD Specifications
6.1 IDD Specifications
6.2 IDD Measurement Conditions
6.2 ODT current
7. AC Timing Specifications
7.1 Timing parameters by speed grade - DDR2-400 & DDR2-533
7.2 Timing parameters by speed grade - DDR2-667
7.3
ODT AC Electrical Characteristics and Operating Conditions
7.4 Notes for AC Timing Specifications
8. Reference Loads, Slew Rates and Slew Rate Derating
8.1 Reference Load for Timing Measurements
8.2 Output Slew Rate Measurements
8.3 Input and Data Setup and Hold Time
8.3.1 Timing Definition for Input Setup and Hold Time
8.3.2 Timing Definition for Data Setup and Hold Time
8.3.3 Slew Rate Definition for Input and Data Setup and Hold Time
8.3.4 Input Setup and Hold Time Derating Table
8.3.5 Data Setup and Hold Time Derating Table
8.4 Overshoot and Undershoot Specification
9. Package Dimensions
10. DDR2 Component Nomenclature
相關(guān)PDF資料
PDF描述
HYB18T1G800AF-37 1 Gbit DDR2 SDRAM
HYB18T1G800AF-3S POT 1.0K OHM 1/4 SQ CERM SL ST
HYB18T1G800AF-5 1 Gbit DDR2 SDRAM
HYB18T1G800AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G800AFL-37 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
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