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| 型號： | HYB18T512400AF-37 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CAP .022UF 16V PPS FILM 1206 5% |
| 中文描述： | 512兆雙數(shù)據(jù)速率2內(nèi)存 |
| 文件頁數(shù)： | 12/33頁 |
| 文件大小： | 936K |
| 代理商： | HYB18T512400AF-37 |
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HYS72T[256/128/64][0/2][0/2]0[G/H]R-[5/3.7]-A
Registered DDR2 SDRAM Modules
Data Sheet
Preliminary
12
Rev. 0.85, 2004-04
3.0 Absolute Maximum Ratings
3.1 Operating Temperature Range
3.2 Supply Voltage Levels and DC Operating Conditions
Parameter
Symbol
Limit Values
Unit
min.
max.
Voltage on any pins relative to V
SS
Voltage on V
DD
relative to V
SS
Voltage on V
DD Q
relative to V
SS
Storage temperature range
V
IN,
V
OUT
– 0.5
2.3
V
V
DD
– 1.0
2.3
V
V
DDQ
– 0.5
2.3
T
STG
-55
+100
o
C
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
DIMM Module Operating Temperature Range (ambient)
TOPR
0
+55
o
C
DRAM Component Case Temperature Range
TCASE
0
+95
o
C
1 - 4
1. DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
measurement conditions, please refer to the JEDEC document JESD51-2.
2. Within the DRAM Component Case Temperature range all DRAM specification will be supported.
3. Above 85
o
C DRAM case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 μs.
4. Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
85
o
C case temperature before initiating self-refresh operation.
Parameter
Symbol
Limit Values
Unit
Notes
min.
nom.
max.
Device Supply Voltage
V
DD
1.7
1.8
1.9
V
-
Output Supply Voltage
V
DDQ
1.7
1.8
1.9
V
1)
Input Reference Voltage
V
REF
0.49 x
V
DDQ
1.7
0.5 x
V
DDQ
–
0.51 x
V
DDQ
3.6
V
2)
EEPROM Supply Voltage
V
DDSPD
V
DC Input Logic High
V
IH (DC)
V
REF
+ 0.125
– 0.30
–
V
DDQ
+ 0.3
V
REF
– 0.125
5
V
DC Input Logic Low
V
IL (DC)
–
V
In / Output Leakage Current
I
L
– 5
–
μ
A
3)
1
2
3
Under all conditions,
V
must be less than or equal to
V
DD
Peak to peak AC noise on
V
may not exceed ± 2%
V
REF (DC)
.
V
REF
is also expected to track noise variations in
V
DDQ
.
For any pin on the DIMM connector under test input of 0 V
V
IN
≤
V
DDQ
+ 0.3 V.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T512400AF-5 | 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA |
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| HYB18T512800AF-3S | 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| HYB18T512800BF-2.5 | 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF) |
| HYB18T512800BF-3.7 | 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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