參數(shù)資料
型號: HYB25D128160TE-37
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 52/85頁
文件大?。?/td> 3085K
代理商: HYB25D128160TE-37
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
52
Rev. 1.0, 2004-04
3.5.4
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (
t
RP
) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
Precharge
Figure 30
Precharge Command
BA
HIGH
BA = bank address
(if A10 is Low, otherwise Don’t Care).
CK
CK
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
All Banks
One Bank
A0-A9, A11, A11128
相關(guān)PDF資料
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