參數(shù)資料
型號: HYB25D128160TE-37
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 70/85頁
文件大小: 3085K
代理商: HYB25D128160TE-37
Data Sheet
70
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 21
I
DD
Specification
–7
DDR266A
Typ.
50
55
65
70
3
20
15
9
28
30
60
70
65
75
100
1.4
1.1
140
140
–6
DDR333
Typ.
60
65
70
80
3.5
25
17
11
32
36
70
85
75
90
120
1.4
1.1
180
180
–5
DDR400B
Typ.
70
75
80
95
4
30
20
13
38
43
85
100
90
100
140
1.4
Unit
Note/Test Condition
1)
1) Test conditions for typical values: VDD = 2.5 V ( DDR266, DDR333), VDD = 2.6 V (DDR400), TA = 25
°
C, test conditions
for maximum values: VDD = 2.7 V, TA = 10
°
C
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for
DDR333, and 200 MHz for DDR400.
3) Input slew rate = 1 V/ns.
4) Enables on-chip refresh and address counters.
Symbol
I
DD0
Max.
65
65
75
85
4
24
21
13
36
40
70
85
75
90
140
2.8
1.1
170
170
Max.
75
75
85
95
4.5
30
24
15
38
45
85
100
90
110
160
2.8
1.1
215
215
Max.
90
90
100
110
5
36
28
18
45
54
100
120
105
130
190
2.8
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
×
4/
×
8
2)3)
×
16
×
4/
×
8
2)3)
×
16
2)3)
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
2)3)
2)3)
2)3)
×
4/
×
8
2)3)
×
16
×
4/
×
8
2)3)
×
16
×
4/
×
8
2)3)
×
16
2)3)
I
DD4R
I
DD4W
I
DD5
I
DD6
standard version
2)3)4)
low power version
×
4/
×
8
2)3)
×
16
I
DD7
210
210
250
250
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