參數(shù)資料
型號： HYB25D128160TE-37
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 62/85頁
文件大小： 3085K
代理商： HYB25D128160TE-37
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
Data Sheet
62
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 15
Voltage (V)
Normal Strength Pull-down and Pull-up Currents
Pulldown Current (mA)
Nominal
Low
High
6.0
6.8
4.6
12.2
13.5
9.2
18.1
20.1
13.8
24.1
26.6
18.4
29.8
33.0
23.0
34.6
39.1
27.7
39.4
44.2
32.2
43.7
49.8
36.8
47.5
55.2
39.6
51.3
60.3
42.6
54.1
65.2
44.8
56.2
69.9
46.2
57.9
74.2
47.1
59.3
78.4
47.4
60.1
82.3
47.7
60.5
85.9
48.0
61.0
89.1
48.4
61.5
92.2
48.9
62.0
95.3
49.1
62.5
97.2
49.4
62.9
99.1
49.6
63.3
100.9
49.8
63.8
101.9
49.9
64.1
102.8
50.0
64.6
103.8
50.2
64.8
104.6
50.4
65.0
105.4
50.5
Pullup Current (mA)
Nominal
High
-7.6
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-77.6
-83.6
-89.7
-95.5
-101.3
-107.1
-112.4
-118.7
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
Nominal
Min.
Max.
Nominal
Low
-6.1
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-43.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Min.
Max.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
9.6
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
103.8
108.4
-4.6
-9.2
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.1
-40.2
-40.3
-40.4
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0
-100.6
-108.1
-115.5
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
Table 16
Parameter
Operating Temperature
V
DD
/
V
DDQ
Process Corner
Evaluation Conditions for I/O Driver Characteristics
Nominal
25
°
C
2.5 V
typical
Minimum
0
°
C
2.3 V
slow-slow
Maximum
70
°
C
2.7 V
fast-fast
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