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參數(shù)資料
| 型號： | HYB314100BJL-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| 中文描述： | 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-20 |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 1153K |
| 代理商： | HYB314100BJL-50 |
Semiconductor Group
2
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 304 words by
1-bit. The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 514100BJ/BJL to be packed in a standard plastic P-SOJ-26/20
package. This package size provides high system bit densities and is compatible with commonly
used automatic testing and insertion equipment. System oriented features include single + 3.3 V
(
±
0.3 V) power supply, direct interfacing with high performance logic device families.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 314100BJ-50
Q67100-Q2035
P-SOJ-26/20-5
3.3 V DRAM
(access time 50 ns)
HYB 314100BJ-60
Q67100-Q2037
P-SOJ-26/20-5
3.3 V DRAM
(access time 60 ns)
HYB 314100BJ-70
Q67100-Q2039
P-SOJ-26/20-5
3.3 V DRAM
(access time 70 ns)
HYB 314100BJL-50
on request
P-SOJ-26/20-5
3.3 V Low Power DRAM
(access time 50 ns)
HYB 314100BJL-60
on request
P-SOJ-26/20-5
3.3 V Low Power DRAM
(access time 60 ns)
HYB 314100BJL-70
on request
P-SOJ-26/20-5
3.3 V Low Power DRAM
(access time 70 ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314100BJL-60 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB 314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| HYB314175BJ-50- | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB314175BJ-55 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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