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參數(shù)資料
| 型號(hào)： | HYB314100BJL-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| 中文描述： | 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-20 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 1153K |
| 代理商： | HYB314100BJL-50 |
Semiconductor Group
8
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Output buffer turn-off delay
t
OFF
0
13
0
15
0
20
ns
12
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
8
–
10
–
10
–
ns
Write command pulse width
8
–
10
–
10
–
ns
Write command setup time
Write command to RAS lead time
t
RWL
Write command to CAS lead time
t
CWL
Data setup time
0
–
0
–
0
–
ns
13
13
–
15
–
20
–
ns
13
–
15
–
20
–
ns
t
DS
t
DH
0
–
0
–
0
–
ns
14
Data hold time
10
–
10
–
15
–
ns
14
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
115
–
130
–
155
–
ns
RAS to WE delay time
50
–
60
–
70
–
ns
13
CAS to WE delay time
13
–
15
–
20
–
ns
13
Column address to WE delay
time
25
–
30
–
35
–
ns
13
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
35
–
40
–
45
–
ns
CAS precharge time
10
–
10
–
10
–
ns
Access time from CAS
precharge
–
30
–
35
–
40
ns
7
RAS pulse width
t
RAS
t
RHCP
50
200 k 60
200 k 70
200 k ns
CAS precharge to RAS Delay
30
–
35
–
40
–
ns
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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