參數(shù)資料
型號： HYB314265BJ-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 256K x 16-Bit EDO-Dynamic RAM
中文描述： 256K X 16 EDO DRAM, 50 ns, PDSO40
文件頁數(shù)： 5/28頁
文件大?。?/td> 1324K
代理商： HYB314265BJ-50
HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Semiconductor Group
5
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70
°
C
Storage temperature range..................................................................................... – 55 to + 150
°
C
Input/output voltage for HYB 514265................................................ – 0.5 to min. (
V
CC
+ 0.5, 7.0) V
Power supply voltage for HYB 514265...........................................................................– 1 to + 7 V
Input/output voltage for HYB 314265................................................ – 0.5 to min. (
V
CC
+ 0.5, 4.6) V
Power supply voltage for HYB 314265.....................................................................– 0.5 to + 4.6 V
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics for HYB514265
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 % (
±
5 % for -400 version) ,
t
T
= 2 ns
Parameter
Symbol
Limit Values
min.
2.4
– 0.5
2.4
–
– 10
Unit Notes
max.
V
CC
+ 0.5
0.8
–
0.4
10
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5.0 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
I
N
< 7 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current:
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
V
V
V
V
μ
A
1
1
1
1
1
I
O(L)
– 10
10
μ
A
1
-400 version
-40 version
-45 version
-50 version
I
CC1
–
120
120
105
95
2
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles:
I
CC2
–
mA
–
-400 version
-40 version
-45 version
-50 version
I
CC3
–
120
120
105
95
mA
2, 4
相關(guān)PDF資料
PDF描述
HYB314265BJL-45 256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-50 256K x 16-Bit EDO-Dynamic RAM
HYB514405BJ-70 1M x 4-Bit Dynamic RAM
HYB 514405BJ 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式))
HYB 514405BJL 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314265BJL-45 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314265BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314400BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
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