參數(shù)資料
型號: HYB3165160T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54
文件頁數(shù): 16/26頁
文件大?。?/td> 383K
代理商: HYB3165160T-60
Semiconductor Group
20
HYB 3164(5)160T-50/-60
4M x 16-DRAM
Read-Write (Read-Modify-Write) Cycle
Row
Address
Row
Address
t
CSH
t
CAS
t
CRP
t
RWC
t
AWD
t
ASR
t
RP
t
RAS
t
RAH
t
CAH
I/O1-I/O16
(Outputs)
VOH
VOL
VIH
VIL
VIH
VIL
I/O1-I/O16
(Inputs)
OE
WRITE
VIH
VIL
t
ASR
Column
Address
t
RCD
t
DH
t
RSH
t
RAD
t
CWD
t
OEH
t
RWD
t
RWL
t
WP
t
CWL
t
CLZ
t
CAC
t
RCS
t
AA
t
OEA
t
DS
t
DZC
t
DZO
t
ODD
t
OEZ
Valid
Data in
Data
Out
t
RAC
“H” or “L”
t
ASC
VIH
VIL
VIH
VIL
RAS
Address
VIH
VIL
UCAS
LCAS
相關(guān)PDF資料
PDF描述
HYB39L128160AC 128-MBIT SYNCHRONOUS LOW-POWER DRAM
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