參數(shù)資料
型號(hào): HYB3165160T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54
文件頁(yè)數(shù): 4/26頁(yè)
文件大?。?/td> 383K
代理商: HYB3165160T-60
Semiconductor Group
8
HYB 3164(5)160T-50/-60
4M x 16-DRAM
TRUTH TABLE
FUNCTION
RAS LCAS UCA
S
WRIT
E
OE
ROW
ADD
COL
ADD
I/O1-
I/O16
Standby
H
H - X
H - X
X
X
X
X
High Impedance
Read:Word
L
L
H
H
L
ROW
COL
Data Out
Read:Lower Byte
L
L
H
H
L
ROW
COL
Lower Byte:Data Out
Upper-Byte:High-Z
Read:Upper Byte
L
H
L
H
L
ROW
COL
Lower Byte:High-Z
Upper Byte:Data Out
Write:Word
(Early-Write)
L
L
L
L
X
ROW
COL
Data In
Write:Lower Byte
(Early-Write)
L
L
H
L
X
ROW
COL
Lower Byte:Data Out
Upper-Byte:High-Z
Write:Upper Byte
(Early Write)
L
H
L
L
X
ROW
COL
Lower Byte:High-Z
Upper Byte:Data Out
Read-Modify-
Write
L
L
L
H - L
L - H ROW
COL
Data Out, Data In
Fast Page Mode
Read (Word)
1st
Cycle
L
H - L
H - L
H
L
ROW
COL
Data Out
Fast Page Mode
Read (Word)
2nd
Cycle
L
H - L
H - L
H
L
n/a
COL
Data Out
Fast Page Mode
Early Write(Word)
1st
Cycle
L
H - L
H - L
L
X
ROW
COL
Data In
Fast Page Mode
Early Write(Word)
2nd
Cycle
L
H - L
H - L
L
X
n/a
COL
Data In
Fast Page Mode
RMW
1st
Cycle
L
H - L
H - L
H - L
L - H ROW
COL
Data Out, Data In
Fast Page Mode
RMW
2st
Cycle
L
H - L
H - L
H - L
L - H n/a
COL
Data Out, Data In
RAS only refresh
L
H
H
X
X
ROW
n/a
High Impedance
CAS-before-RAS
refresh
H - L L
L
H
X
X
n/a
High Impedance
Test Mode Entry
H - L L
L
L
X
X
n/a
High Impedance
Hidden Refresh
(Read)
L-H-
L
L
L
H
L
ROW
COL
Data Out
Hidden Refresh
(Write)
L-H-
L
L
L
L
X
ROW
COL
Data In
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