參數(shù)資料
型號(hào)： HYB39L128160AC-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128-MBIT SYNCHRONOUS LOW-POWER DRAM
中文描述： 128 - Mbit同步低功率DRAM
文件頁數(shù)： 11/49頁
文件大?。?/td> 938K
代理商： HYB39L128160AC-75
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
11
2003-02
Similar to the page mode of conventional DRAM
’
s, burst read or write accesses on any column
address are possible once the RAS cycle latches the sense amplifiers. The maximum
W
RAS
or the
refresh interval time limits the number of random column accesses. A new burst access can be
done even before the previous burst ends. The interrupt operation at every clock cycle is supported.
When the previous burst is interrupted, the remaining addresses are overridden by the new address
with the full burst length. An interrupt which accompanies an operation change from a read to a write
is possible by exploiting DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are
possible. With the programmed burst length, alternate access and precharge operations on two or
more banks can realize fast serial data access modes among many different pages. Once two or
more banks are activated, column to column interleave operation can be performed between
different pages. When the partial array activation is set, data will get lost when self-refresh is used
in all non activated banks.
5HIUHVK0RGH
Mobile-RAM has two refresh modes, Auto Refresh and Self Refresh.
$XWR5HIUHVK
Auto Refresh is similar to the CAS -before-RAS refresh of earlier DRAMs. All banks must be
precharged before applying any refresh mode. An on-chip address counter increments the word
and the bank addresses. No bank information is required for both refresh modes.
Burst Length and Sequence
Burst
Length
Starting
Address
(A2 A1 A0)
Sequential Burst
Addressing
(decimal)
Interleave Burst
Addressing
(decimal)
2
xx0
xx1
0, 1
1, 0
0, 1
1, 0
4
x00
x01
x10
x11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
000
001
010
011
100
101
110
111
0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0
2 3 4 5 6 7 0 1
3 4 5 6 7 0 1 2
4 5 6 7 0 1 2 3
5 6 7 0 1 2 3 4
6 7 0 1 2 3 4 5
7 0 1 2 3 4 5 6
0 1 2 3 4 5 6 7
1 0 3 2 5 4 7 6
2 3 0 1 6 7 4 5
3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3
5 4 7 6 1 0 3 2
6 7 4 5 2 3 0 1
7 6 5 4 3 2 1 0
Full Page
nnn
Cn, Cn+1, Cn+2
not supported
相關(guān)PDF資料
PDF描述
HYB39L128160AC-8 128-MBIT SYNCHRONOUS LOW-POWER DRAM
HYB39L128160AT BJAWBMSpecialty DRAMs Mobile-RAM
HYB39L128160AT-75 128-MBIT SYNCHRONOUS LOW-POWER DRAM
HYB39L128160AT-8 128-MBIT SYNCHRONOUS LOW-POWER DRAM
HYB39L128160AC-7.5 HEX DIE SET,.100/.213/.429
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39L128160AC-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM
HYB39L128160AT 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB39L128160AT-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?128M (8Mx16) 133MHz 3-3-3 ?
HYB39L128160AT-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM
HYB39L128160AT-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*