參數(shù)資料
型號(hào)： HYB39S128400CT-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128-MBit Synchronous DRAM
中文描述： 128兆位同步DRAM
文件頁數(shù)： 16/51頁
文件大?。?/td> 470K
代理商： HYB39S128400CT-7.5
HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
INFINEON Technologies
16
9.01
Operating Currents
T
= 0 to 70
°
C,
V
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Notes
5. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7 &
-7.5 and at 100 MHz for -8 parts. Input signals are changed once during
t
.
6. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
V
DDQ
current is excluded.
Parameter & Test Condition
Symb. -7
-7.5
-8
Unit
Note
max.
Operating current
t
=
t
All banks operated
in random access,all banks
operated in ping-pong manner
–
I
CC1
170
160
150
mA
3,4
Precharge standby current
in Power Down Mode
CS =
V
IH (MIN.)
, CKE
≤
V
IL(MAX.)
Precharge standby current
in Non Power Down Mode
CS =
V
IH (MIN.)
, CKE
≥
V
IH(MIN.)
No operating current
t
= min., CS =
V
,
active state (max. 4 banks)
t
CK
= min
I
CC2P
1.5
mA
3
t
CK
= min
I
CC2N
45
40
35
mA
3
CKE
≥
V
IH(MIN.)
CKE
≤
V
IL(MAX.)
I
CC3P
I
CC3N
50
50
45
mA
3
10
mA
3
Burst Operating Current
t
CK
= min,Read command cycling
Auto Refresh Current
t
= min, trc = trcmin.
Auto Refresh command cycling
–
I
CC4
110
100
90
mA
3, 4
–
I
CC5
250
230
210
mA
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity
standard
version
I
CC6
1.5
mA
L-version
690
μ
A
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