參數(shù)資料
型號(hào)： HYB39S16160BT-10
廠商： SIEMENS A G
元件分類： DRAM
英文描述： SWITCH, SPST
中文描述： 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
封裝： 0.400 INCH, PLASTIC, TSOP2-50
文件頁(yè)數(shù)： 13/22頁(yè)
文件大?。?/td> 147K
代理商： HYB39S16160BT-10
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
13
1998-10-01
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Power Up Procedure
All
V
DD
and
V
DDQ
must reach the specified voltage no later than any of input signal voltages. An
initial pause of 200
μ
s is required after power on. All banks have to be precharged and a minimum
of 2 auto-refresh cycles are required prior to the mode register set operation.
Bank Selection by Address Bits
A10
Low
Low
High
A11
Low
High
Don’t Care
Bank A only
Bank B only
Both A and B
相關(guān)PDF資料
PDF描述
HYB39S16160CT-10 16 MBit Synchronous DRAM
HYB39S16320TQ-6 128 x 64 pixel format, LED Backlight available
HYB39S16320TQ-7 128 x 64 pixel format, LED Backlight available
HYB39S16320TQ-8 128 x 64 pixel format, LED Backlight available
HYB39S13620TQ- 128 x 64 pixel format, LED Backlight available
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S16160BT-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM
HYB39S16160CT-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM
HYB39S16160CT6 制造商:SIEMENS 功能描述:New
HYB39S16160CT-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
HYB39S16160CT-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
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