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參數(shù)資料
| 型號： | HYB39S16160BT-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | SWITCH, SPST |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HYB39S16160BT-10 |
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
17
1998-10-01
Common Parameters
Row to Column Delay time
t
RCD
t
RAS
t
RP
t
RC
t
RRD
t
CCD
24
–
30
–
ns
Row Active time
36
120k
45
120k
ns
Precharge time
24
–
30
–
ns
Row Cycle time
60
120k
75
120k
ns
Bank to Bank delay time
16
–
20
–
ns
CAS to CAS delay time (same bank)
1
–
1
–
CLK
Refresh Cycle
Self Refresh Exit time
t
SREX
t
REF
2 CLK +
t
RC
64
ns
13
Refresh period (4096 cycles)
–
–
64
ms
12
Read Cycle
Data Out Hold time
t
OH
t
LZ
t
HZ
3
–
3
–
ns
Data Out to Low Impedance time
0
–
0
–
ns
Data Out to High Impedance time
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
–
–
–
5
7
19
–
–
–
6
8
25
ns
ns
ns
14
DQM Data Out Disable Latency
t
DQZ
2
–
2
–
CLK
Write Cycle
Last Data-Input to Precharge
(Write Recovery Latency)
CL = 1, 2
CL = 3
t
DPL
1
2
–
–
1
2
–
–
CLK
CLK
DQM Write Mask Latency
t
DQW
0
–
0
–
CLK
AC Characteristics
(cont’d)
8, 9
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symbol
Limit Values
Unit
Note
-8
-10
min.
max.
min.
max.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16160BT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16160CT-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16160CT6 | 制造商:SIEMENS 功能描述:New |
| HYB39S16160CT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
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