參數(shù)資料
型號(hào): HYB39S16160BT-10
廠(chǎng)商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: SWITCH, SPST
中文描述: 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁(yè)數(shù): 15/22頁(yè)
文件大小: 147K
代理商: HYB39S16160BT-10
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
15
1998-10-01
Operating Currents
T
A
= 0 to 70
o
C,
V
CC
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol Test Condition
CAS
Latency
-8
-10
Unit Note
max. max.
Operating current
I
CC1
Burst Length = 4
t
RC
t
RC(MIN.)
t
CK
t
CK(MIN.)
,
I
O
= 0 mA
2 bank interleave operation
CKE
V
IL(MAX.)
,
t
CK
t
CK(MIN.)
1
2
3
80
115
125
65
90
100
mA
mA
mA
6, 7
Precharge
Standby current in
Power Down
Mode
I
CC2P
3
3
mA
I
CC2PS
CKE
V
IL(MAX.)
,
t
CK
= infinite –
2
2
mA
Precharge
Standby current in
Non-power down
Mode
I
CC2N
CKE
V
IH(MIN.)
,
t
CK
t
CK(MIN.)
input signals
changed once in 3 cycles
CKE
V
IH(MIN.)
,
t
CK
= infinite,
input signals are stable
CKE
V
IL(MAX).
,
t
CK
t
CK(MIN.)
CKE
V
IL(MAX.)
,
t
CK
= infinite, input signals
are stable
CKE
V
IH(MIN.)
,
t
CK
t
CK(MIN.)
, changed once
in 3 cycles
CKE
V
IH(MIN.)
,
t
CK
= infinite, input signals
are stable
20
20
mA
CS = High
I
CC2NS
10
10
mA
Active Standby
current in Power
Down Mode
I
CC3P
I
CC3PS
3
3
mA
2
2
mA
Active Standby
current in Non-
power Down
Mode
I
CC3N
25
25
mA
CS = High
6
I
CC3NS
15
15
mA
Burst Operating
current
I
CC4
Burst Length = full page
t
RC
= infinite
t
CK
t
CK(MIN.)
,
I
O
= 0 mA
2 banks activated
t
RC
t
RC(MIN.)
1
2
3
50
80
120
40
65
95
mA
6, 7
Auto (CBR)
Refresh current
I
CC5
1
2
3
75
95
115
60
75
90
mA
mA
mA
6, 7
Self Refresh
I
CC6
CKE
0.2 V
2
2
mA
6, 7
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