參數(shù)資料
型號(hào): HYB39S16160CT-8
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16 MBit Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝: 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50
文件頁數(shù): 10/22頁
文件大?。?/td> 147K
代理商: HYB39S16160CT-8
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
10
1998-10-01
Address Input for Mode Set (Mode Register Operation)
SPD03138
BS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Burst Length
BT
CAS Latency
Operation Mode
Address Bus (Ax)
Mode Register (Mx)
Operation Mode
M7
M8
M9
M10
M11
Mode
Normal
0
0
0
0
0
0
0
1
X
X
with Single
Write
Multiple Burst
0
0
0
Reserve
Latency
M6
M5
M4
CAS Latency
1
0
0
1
2
0
1
0
3
0
1
1
Reserve
1
0
0
Reserve
1
0
1
0
1
1
Reserve
Reserve
1
1
1
Sequential Burst Addressing
Interleave Burst Addressing
0
1
2
3
4
5
6
7
0
1
2
0
1
0
1
2
0
1
0
1
2
0
1
6
5
4
3
0
7
6
5
4
3
2
1
2
3
4
5
2
3
4
5
6
7
4
3
7
6
5
4
3
2
3
4
5
6
7
7
6
5
6
7
7
7
6
6
7
5
4
4
5
3
2
2
3
1
0
3
7
6
5
4
3
2
1
0
2
5
4
7
6
4
5
6
7
0
1
5
4
7
6
1
0
2
3
0
1
6
7
3
2
1
0
7
6
0
1
2
3
4
5
1
0
3
2
5
4
0
Sequential
Type
M3
Interleave
1
Burst Type
1
1
1
Full Page
Reserve
1
1
0
1
0
1
Reserve
0
0
1
Reserve
1
1
0
0
1
0
1
0
0
Burst Length
M0
M1
M2
Sequential
0
0
0
Interleave
Length
1
2
8
Reserve
Reserve
Reserve
Reserve
4
4
8
2
1
*)
*)
optional
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