參數(shù)資料
型號: HYB39S16160CT-8
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16 MBit Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝: 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50
文件頁數(shù): 6/22頁
文件大?。?/td> 147K
代理商: HYB39S16160CT-8
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
6
1998-10-01
Block Diagram for HYB 39S16400T (2 banks
×
4 M
×
4 SDRAM)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11 (BS)
A
CLK Buffer
CLK
Row
Address
Counter
CS Buffer
RAS Buffer
CAS Buffer
WE Buffer
DQM Buffer
CS
RAS
CAS
WE
DQM
C
Self
Refresh Clock
CKE Buffer
CKE
2048 x 1024
Memory Bank A
and DQ Gate
Sense Amplifiers
Row/Column
Select
Bank A
Predecode A
Sequential
Control
Bank A
Mode Register
Control
Bank B
Predecode B
Sequential
Row/Column
Select
Bank B
Row Decoder
Data Latches
Data Latches
and DQ Gate
Row Decoder
Memory Bank B
2048 x 1024
Sense Amplifiers
D
2048
8
4
12
8
8
12
11
11
11
3
3
8
2048
DQ0
DQ1
DQ2
DQ3
Column Decoder
Column Decoder
SPB02835
1024
1024
相關(guān)PDF資料
PDF描述
HYB39S16160BT-10 SWITCH, SPST
HYB39S16160CT-10 16 MBit Synchronous DRAM
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