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參數(shù)資料
| 型號： | HYB39S16320TQ-7 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 512K X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 20/70頁 |
| 文件大小： | 563K |
| 代理商： | HYB39S16320TQ-7 |
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HYB 39S16320TQ-6/-7/-8
Semiconductor Group
20
1998-10-01
Symbolic Representation of Write Masking Function
If a particular bit in the WPB mask register is a “0”, the data appearing on the corresponding DQ
input will be ignored, and the existing data in the corresponding DRAM cell will remain unchanged.
If a mask data is a “1”, the data appearing on the corresponding DQ input will be written to the
corresponding DRAM cell. The overall Write mask consists of a combination of the DQM inputs,
which will mask on a per-byte basis, and the WPB mask register, which masks on a per-bit basis.
If a particular DQM signal was registered high, the corresponding byte will be masked. A given bit
is written if the corresponding DQM signal registered is “0”and the corresponding WPB mask
register bit is “1”.
Note that the DQM Latency for Write is zero.
Block Write (BW)
Each Block Write cycle writes a single data value from a Color Register to the block of eight
consecutive column locations addressed by A7 - A3. If Single Color Register Mode is enabled, the
content of Color Register 0 is written. If both Color Registers are enabled, address pin A0 selects
the desired Color Register. Address A0 = 0 selects Color Register 0, address pin A0 = 1 Color
Register 1. The information on the DQs which is registered coincident with the Block Write
command is used to mask specific column/byte combinations within the block.
MR
&
DRAM
Cell
DQ
DQM
SPS03710
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S16320TQ-8 | 128 x 64 pixel format, LED Backlight available |
| HYB39S13620TQ- | 128 x 64 pixel format, LED Backlight available |
| HYB39S16320TQ-10 | 128 x 64 pixel format, LED Backlight available |
| HYB39S16400-1 | 16 MBit Synchronous DRAM |
| HYB39S16400CT-8 | 16 MBit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16320TQ-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S1632TQ55 | 制造商:N/A 功能描述:NEW |
| HYB39S16400 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400-1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400AT-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
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