參數(shù)資料
型號(hào)： HYB39S16320TQ-7
廠商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 128 x 64 pixel format, LED Backlight available
中文描述： 512K X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 24/70頁(yè)
文件大?。?/td> 563K
代理商： HYB39S16320TQ-7
HYB 39S16320TQ-6/-7/-8
Semiconductor Group
24
1998-10-01
Operating Currents
T
A
= 0 to 70
°
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
C
I1
C
I2
max. Values
Unit
Input capacitance (A0 to A9, BA)
4
pF
Input capacitance
(RAS, CAS, WE, CS, CLK, CKE, DQM, DSF)
4
pF
Output capacitance (DQ)
C
IO
6
pF
Parameter & Test
Condition
Symb. -6
-7
-8
Unit
Note
max.
Operating current
CAS Latency = 3
CAS Latency = 2
t
RC
≥
t
RC(MIN.)
,
t
CK
≥
t
CK(MIN.)
,
I
O
= 0 mA
CKE
≤
V
IL(MAX.)
t
CK
=
t
CK(MIN.)
CKE
≤
V
IL(MAX.)
,
t
CK
= infinite
CKE
≥
V
IH(MIN.)
t
CK
≥
t
CK(MIN.)
,
input changed once in 30 ns
CKE
≥
V
IH(MIN.)
,
t
CK
= infinite,
no input change
CKE
≤
V
IL(MAX.)
,
t
CK
≥
t
CK(MIN.)
CKE
≤
V
IL(MAX.)
,
t
CK
= infinite
CKE
≥
V
IH(MIN.)
,
t
CK
≥
t
CK(MIN.)
input changed every 30 ns
CKE
≥
V
IH(MIN.)
,
t
CK
= infinite,
no input change
I
CC1
200
180
200
180
180
170
mA
2
Precharge standby current
in Power Down Mode
I
CC2P
I
CC2PS
I
CC2N
3
2
3
2
3
2
mA
2
Precharge standby current
in Non Power Down Mode
I
CC2NS
60
15
60
15
60
15
mA
mA
2
Active standby current in
Power Down Mode
I
CC3P
I
CC3PS
I
CC3N
3
3
3
3
3
3
mA
mA
Active standby current in
Non-Power Down Mode
I
CC3NS
90
30
90
30
90
25
mA
mA
Burst Operating Current
CAS Latency = 3
CAS Latency = 2
Burst Length = full page
t
RC
= infinite
t
CK
≥
t
CK(MIN.)
,
I
O
= 0 mA,
2 banks interleave
I
CC4
200
200
200
200
190
190
mA
mA
2, 3
Auto (CBR) Refresh
Current
CAS Latency = 3
CAS Latency = 2
t
RC
≥
t
RC(MIN.)
I
CC5
170
160
170
160
160
160
mA
2
Self Refresh Current
CKE
≤
0,2 V
t
CK
≥
t
CK(MIN.)
,
I
O
= 0 mA
t
BWC
=
t
BWC(MIN.)
2
2
2
mA
Operating Current
(Block Write)
200 200 190 mA
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