HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M
×
16 DRAM
Semiconductor Group
9
1998-10-01
Access time from CAS precharge
t
CPA
t
RAS
t
RHPC
–
30
–
35
ns
7
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS Delay
30
–
35
–
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
t
PRWC
t
CPWD
71
–
80
–
ns
CAS precharge to WE
48
–
55
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
–
10
–
ns
CAS hold time
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
ns
Write hold time referenced to RAS
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
–
40
–
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min.
max. min.
max.