參數(shù)資料
型號: HYB514256BL-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
中文描述: 256K X 4 FAST PAGE DRAM, 70 ns, PDIP20
文件頁數(shù): 6/22頁
文件大?。?/td> 215K
代理商: HYB514256BL-70
Semiconductor Group
60
HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K
×
4-DRAM
Average
V
CC
supply current, fast page mode:
-60 version
-70 version
-50 version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
I
CC4
70
60
50
mA
mA
mA
2) 3
2) 3)
2) 3)
L-Version
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, CAS-before-RAS
refresh mode:
I
CC5
1
200
mA
μ
A
1)
1)
-50 version
-60 version
-70 version
(RAS, CAS cycling:
t
RC
=
t
RC
min.)
For L-version only:
Battery backup current:
average power supply current,
battery backup mode:
(CAS = CAS before RAS cycling or 0.2 V,
OE =
V
CC
– 0.2 V
WE =
V
CC
– 0.2 V or 0.2 V,
A0 to A8 =
V
CC
– 0.2 V or 0.2 V,
I/O1 to I/O4 =
V
CC
– 0.2 V or 0.2 V or open,
t
RC
= 125
μ
s,
t
RAS
=
t
RAS
min. ~ 1
μ
s)
I
CC6
90
80
70
mA
mA
mA
2)
2)
2)
I
CC7
300
μ
A
2)
DC Characteristics
(cont’d)
T
A
= 0 to 70 C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
相關(guān)PDF資料
PDF描述
HYB514256B-60 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256B-70 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256B 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256B-50 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514265BJ-40 256K x 16-Bit EDO-Dynamic RAM
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