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參數(shù)資料
| 型號： | HYB514256BL-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| 中文描述： | 256K X 4 FAST PAGE DRAM, 70 ns, PDIP20 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 215K |
| 代理商： | HYB514256BL-70 |
Semiconductor Group
62
HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K
×
4-DRAM
Row address setup time
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
0
–
0
–
0
–
ns
Row address hold time
10
–
10
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
10
–
15
–
15
–
ns
Column address to RAS lead
time
25
–
30
–
35
–
ns
Read command setup time
t
RCS
0
–
0
–
0
–
ns
Read command hold time
8)
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
referenced to RAS
8)
0
–
0
–
0
–
ns
Write command hold time
t
WCH
t
WP
t
RWL
10
–
10
–
15
–
ns
Write command pulse width
10
–
10
–
15
–
ns
Write command to RAS lead
time
15
–
15
–
20
–
ns
Write command to CAS lead
time
t
CWL
15
–
15
–
20
–
ns
Data setup time
9)
t
DS
0
–
0
–
0
–
ns
Data hold time
9)
t
DH
10
–
15
–
15
–
ns
Refresh period
t
REF
t
REF
–
8
–
8
–
8
ms
Refresh period
L-version
Write command setup time
10)
t
WCS
CAS to WE delay time
–
64
–
64
–
–
ms
0
–
0
–
0
–
ns
10)
t
CWD
40
–
45
–
50
–
ns
RAS to WE delay time
10)
t
RWD
t
AWD
75
–
90
–
100
–
ns
Column address to WE delay
time
10)
50
–
60
–
65
–
ns
CAS setup time (CAS-before-
RAS cycle)
t
CSR
5
–
5
–
5
–
ns
CAS hold time (CAS-before-
RAS cycle)
t
CHR
10
–
15
–
15
–
ns
RAS to CAS precharge time
t
RPC
0
–
0
–
0
–
ns
AC Characteristics
(cont’d)
4) 13)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
-70
min.
max.
min.
max.
min.
max.
相關PDF資料 |
PDF描述 |
|---|---|
| HYB514256B-60 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-70 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-50 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514265BJ-40 | 256K x 16-Bit EDO-Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514256BZ-60 | 制造商:Siemens 功能描述:256K X 4 FAST PAGE DRAM, 60 ns, PZIP20 |
| HYB514256BZ-70 | 制造商:Siemens 功能描述:Dynamic RAM, Fast Page, 256K x 4, 20 Pin, Plastic, ZIP |
| HYB514256BZ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514256BZL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514256BZL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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