參數(shù)資料
型號: HYB514400BJ-80
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述: 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
文件頁數(shù): 3/24頁
文件大小: 124K
代理商: HYB514400BJ-80
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
3
1998-10-01
Pin Configuration
Pin Names
A0 - A9
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
OE
Output Enable
I/O1 - I/O4
V
CC
V
SS
N.C.
Data Input/Output
Power Supply (+ 5 V)
Ground (0 V)
No Connection
P-SOJ-26/20-2
1
2
3
4
5
9
10
11
12
13
14
15
16
17
18
22
23
A8
A7
A6
A0
A1
A2
WE
RAS
A9
SPP02797
I/O4
I/O3
CAS
OE
SS
V
I/O1
I/O2
A3
A5
A4
26
25
24
CC
V
相關(guān)PDF資料
PDF描述
HYB514400BT-60 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
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HYB514400BT-80 RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
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