參數(shù)資料
型號： HYB514400BJ-80
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述： 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
文件頁數(shù)： 6/24頁
文件大?。?/td> 124K
代理商： HYB514400BJ-80
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
6
1998-10-01
Capacitance
T
A
= 0 to 70
°
C;
V
CC
= 5 V
±
10 %;
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A9)
C
I1
C
I2
C
IO
–
5
pF
Input capacitance (RAS, CAS, WE, OE)
–
7
pF
Output capacitance (IO1 to IO4)
–
7
pF
AC Characteristics
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
5, 6
Symbol
Limit Values
Unit
Note
-50
-60
min. max. min. max.
Common Parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
95
–
110
–
ns
RAS precharge time
35
–
40
–
ns
RAS pulse width
50
10k
60
10k
ns
CAS pulse width
13
10k
15
10k
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
10
–
15
–
ns
RAS to CAS delay time
18
37
20
45
RAS to column address delay time
13
25
15
30
ns
RAS hold time
13
–
15
–
ns
CAS hold time
50
–
60
–
ns
CAS to RAS precharge time
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
ns
7
Refresh period
–
16
–
16
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
–
50
–
60
ns
8, 9
Access time from CAS
–
13
–
15
ns
8, 9
Access time from column address
–
25
–
30
ns
8, 10
OE access time
–
13
–
15
ns
相關(guān)PDF資料
PDF描述
HYB514400BT-60 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BT-70 RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
HYB 514400BJ-60 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM)
HYB514400BJ-70 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BT-80 RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514400BJ-BT60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
HYB514400BJL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
HYB514400BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
HYB514400BJL-80 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
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