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參數(shù)資料
| 型號(hào)： | HYE18P16161ACL85 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 16M Asynchronous/Page CellularRAM |
| 中文描述： | 1,600異步/頁的CellularRAM |
| 文件頁數(shù)： | 17/33頁 |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P16161ACL85 |
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Data Sheet
17
V2.0, 2003-12-16
HYE18P16161AC(-/L)70/85
16M Asynch/Page CellularRAM
Functional Description
2.3.1
By applying PASR the user can dynamically customize the memory capacity to one’s actual needs in normal
operation mode and standby mode. With the activation of PASR there is no longer a power penalty paid for the
larger CellularRAM memory capacity in case only e.g. 8 Mbits are used by the host system.
Bit2 down to bit0 specify the active memory array and its location (starting from bottom or top). The memory parts
not used are powered down immediately after the mode register has been programmed. Advice for the proper
register setting including the address ranges is given in
Figure 7
.
Partial Array Self Refresh (PASR)
Figure 7
PASR Programming Scheme
PASR is activated, i.e. the memory parts not used are powered down, after ZZ has been held low for more than
10μs. In PASR state no READ or WRITE commands are recognized. To resume WRITE or READ operations, the
device must exit PASR by taking ZZ to high level voltage again.
Pre-condition to enter PASR on ZZ low is that the Deep Power Down mode has been disabled before via
RCR.Bit4= 1.
Figure 8
shows an exemplary PASR configuration where it is assumed that the application uses max. 8 Mbit out
of 16 Mbit.
PASR
[2:0]
w
Partial Array Self Refresh
The 3-bit PASR field is used to specify the active memory array. The active memory
array will be kept periodically refreshed whereas the disabled parts will be excluded
from refresh and previously stored data will get lost. The normal operation still can be
executed in disabled array, but stored data is not guaranteed. This way the customer
can dynamically adapt the memory capacity in steps of 8 Mbit to one’s need without
paying a power penalty. Please refer to
Figure 7
.
000
entire memory array (default)
011
lower 1/2 of the memory array (8 Mb)
100
zero
101
upper 1/2 of the memory array (8 Mb)
All others; reserved (16Mb)
Reserved
must be set to ‘0’
Res
[18:8],
3
w
1) w: write-only access
Field
Bits
Type
1)
Description
8M
8M
00000h
7FFFFh
FFFFFh
000
16M
011
8M
FFFFFh
80000h
00000h
100
101
PASR.Bit2,1,0
PASR.Bit2,1,0
8M
0M
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| HYE18P16161AC-85 | 16M Asynchronous/Page CellularRAM |
| HYE18P16161AC-60 | MEMORY SPECTRUM |
| HYE18P16161AC-70 | 16M Asynchronous/Page CellularRAM |
| HYE18P32160AC | 32M Synchronous Burst CellularRAM |
| HYE18P32160AC-96 | 32M Synchronous Burst CellularRAM |
相關(guān)代理商/技術(shù)參數(shù) |
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| HYE18P32160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
| HYE18P32160AC-125 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
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| HYE18P32160AC-96 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
| HYE18P32160ACL125 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
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