參數資料
型號: HYE18P32160AC-96
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Synchronous Burst CellularRAM
中文描述: 32M的同步突發(fā)的CellularRAM
文件頁數: 48/53頁
文件大?。?/td> 1426K
代理商: HYE18P32160AC-96
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Electrical Characteristics
Data Sheet
48
V2.0, 2003-12-16
3.3
Output Test Conditions
Figure 29
Output Test Circuit
Please refer to section
Section 2.9
.
3.4
Pin Capacitances
Table 21
Parameter
Operating Characteristics
Symbol
9.6
12.5
15
Unit
Test
Condition
Notes
Min.
Max. Min.
Max. Min.
Max.
Operating Current
Async read/write random @
t
RCmin
Async read/write random @
t
RC
=1
μ
s
Async Page read
Sync burst (continuous)
Burst Initial access
Stand-By Current : L-part
Stand-By Current : Standard
I
DD1
I
DD1L
I
DD1P
I
DD4
I
DD5
I
DD2
20
5
15
20
35
20
5
15
18
35
17
5
12
15
30
mA
V
in
=
V
DD
or
V
SS
,
Chip enabled,
I
out
= 0
1)
90
90
90
μ
A
μ
A
V
in
=
V
DD
or
V
SS
,Chip
deselected,
(Full array)
V
in
=
V
DD
or
V
SS
120
120
120
Deep Power Down Current
I
DD3
25
25
25
μ
A
1) The specification assumes the output disabled.
Table 22
Pin
Pin Capacitances
Limit Values
Unit
Condition
Min.
Max.
5.0
5.0
6.0
6.0
A20 - A0, CS, OE, WE, UB, LB, CRE, ADV
CLK
DQ15 - DQ0
WAIT
pF
pF
pF
pF
T
A
= +25 °C
freq. = 1 MHz
V
pin
= 0 V
(sampled, not 100%
tested)
30pF
Test point
VDDQ
DUT
5.4kOhm
5.4kOhm
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