參數(shù)資料
型號(hào)： HYM641020GS-70
廠(chǎng)商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 1M x 64-Bit Dynamic RAM Module
中文描述： 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168
封裝： DIMM-168
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 82K
代理商： HYM641020GS-70
Semiconductor Group
5
HYM 641010/20GS-60/-70
1M x 64 Module
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 °C
Storage temperature range......................................................................................– 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,32 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 10
10
–
I
O(L)
– 10
10
μ
A
–
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
HYM 641010/20GS-60
HYM 641010/20GS-70
I
CC1
–
–
1760
1600
mA
mA
2), 3)
I
CC2
–
50
mA
–
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
1760
1600
mA
mA
2)
相關(guān)PDF資料
PDF描述
HYM64V2005GU-50 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
HYM64V2005GU-60 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
HYM721000GS-60 1M x 72-Bit Dynamic RAM Module
HYM721000GS-60- 1M x 72-Bit Dynamic RAM Module
HYM721000GS-70 1M x 72-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM642005GS-50 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x64 EDO Page Mode DRAM Module
HYM642005GS-60 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x64 EDO Page Mode DRAM Module
HYM64V1005GU-5 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1005GU-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1005GU-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
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