參數(shù)資料
型號(hào): HYM641020GS-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 64-Bit Dynamic RAM Module
中文描述: 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 6/11頁(yè)
文件大小: 82K
代理商: HYM641020GS-70
Semiconductor Group
6
HYM 641010/20GS-60/-70
1M x 64 Module
DC Characteristics
(cont’d)
1)
Capacitance
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %;
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Average
V
CC
supply current during fast
page mode:
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS =
V
IL,
CAS, address cycling
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC4
1120
1120
mA
mA
2), 3)
I
CC5
30
mA
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS, CAS cycling
, t
RC
=
t
RC
min.)
I
CC6
1760
1600
mA
mA
1)
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A9,B0)
C
I1
C
I2
C
I3
C
I4
C
IO1
10
pF
Input capacitance (RAS0, RAS2)
50
pF
Input capacitance (CAS0-CAS7)
15
pF
Input capacitance (WE0,WE2,OE0,OE2)
15
pF
I/O capacitance (DQ0-DQ63)
15
pF
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