參數(shù)資料
型號(hào): HYM72V1005GU-60
廠商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
中文描述: 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 74K
代理商: HYM72V1005GU-60
HYM 64(72)V1005GU-50/-60
1M x 64/72 DRAM Module
Semiconductor Group
7
Absolute Maximum Ratings
Operating temperature range .........................................................................................
Storage temperature range......................................................................................
Input/output voltage ..............................................................................
Power supply voltage....................................................................................................
Power dissipation..................................................................................................................
Data out current (short circuit) ................................................................................................
0 to + 70 °C
– 55 to + 125 °C
–0.5 to min (Vcc+0.5, 4.6) V
–0.5 to 4.6 V
4.42 W
50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 °C;
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
x 64/ x72
Unit Notes
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc + 0.5 V
1)
Input low voltage
– 0.5
0.8
V
1)
Output high voltage (LVTTL)
Output H“l(fā)evel voltage (
I
OUT
= – 2 mA)
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (
I
OUT
= + 2 mA)
Output high voltage (LVCMOS)
Output H“l(fā)evel voltage (
I
OUT
=– 100
μ
A)
Output low voltage (LVCMOS)
Output L“l(fā)evel voltage (
I
OUT
=+100
μ
A)
Input leakage current
(0 V <
V
IN
< Vcc, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< Vcc)
2.4
V
1)
V
OL
0.4
V
1)
V
OH
Vcc-0.2
V
1)
V
OL
0.4
V
1)
I
I(L)
– 10
10
μ
A
1)
I
O(L)
– 10
+10
μ
A
1)
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