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參數(shù)資料
| 型號： | HYM72V1625GS-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 16M x 72-Bit EDO-DRAM Module |
| 中文描述： | 16米x 72位江戶記憶體模組 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 70K |
| 代理商： | HYM72V1625GS-50- |
Semiconductor Group
5
HYM72V1625/35GS-50/-60
16M x 72-ECC EDO-Module
Absolute Maximum Ratings
Operating temperature range .........................................................................................
Storage temperature range......................................................................................
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage.............................................................................................
Power dissipation....................................................................................................................
Data out current (short circuit) ................................................................................................
0 to + 70 °C
– 55 to + 125 °C
– 1.0 V to + 4.6 V
8.3 W
50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 °C;
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.5
V
1)
Input low voltage
– 1.0
0.8
V
1)
Output high voltage (LVTTL)
Output H“ voltage level (
I
OUT
= – 2 mA)
Output low voltage (LVTTL)
Output L“voltage level (
I
OUT
= 2 mA)
Output high voltage (LVCMOS)
Output H“voltage level (
I
OUT
= – 100
μ
A)
Output low voltage (LVCMOS)
Output L“voltage level (
I
OUT
= 100
μ
A)
Input leakage current
(0 V <
V
IN
< Vcc, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< Vcc)
Average
V
CC
supply current:
2.4
–
V
1)
V
OL
–
0.4
V
1)
V
OH
Vcc-0.2
–
V
1)
V
OL
–
0.2
V
1)
I
I(L)
– 20
20
μ
A
1)
I
O(L)
– 20
20
μ
A
1)
-50 version
-60 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =2.4V,
one address change within 15,6
μ
s trc)
I
CC1
–
–
2520
2070
mA
mA
2) 3) 4)
I
CC2
–
50
mA
–
相關PDF資料 |
PDF描述 |
|---|---|
| HYM72V1625GS-60 | 16M x 72-Bit EDO-DRAM Module |
| HYM72V1635GS-60 | 16M x 72-Bit EDO-DRAM Module |
| HYM72V2005GS-60 | 2M x 72-Bit EDO-DRAM Module |
| HYM72V2005GU-50 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
| HYM72V2005GU-60 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V1625GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 72-Bit EDO-DRAM Module |
| HYM72V1630GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 72-Bit Dynamic RAM Module |
| HYM72V1630GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 72-Bit Dynamic RAM Module |
| HYM72V1635GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 72-Bit EDO-DRAM Module |
| HYM72V1635GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 72-Bit EDO-DRAM Module |
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