參數(shù)資料
型號(hào): HYS 64V32220GD(L)-8A
廠商: SIEMENS AG
英文描述: 3.3V SDRAM Modules(3.3V SDRAM 模塊)
中文描述: 3.3V的內(nèi)存模塊(3.3V的內(nèi)存模塊)
文件頁數(shù): 6/12頁
文件大?。?/td> 90K
代理商: HYS 64V32220GD(L)-8A
HYS64V32220GD(L)-8A
PC100 144 pin SO-DIMM SDRAM Modules
INFINEON Technologies
6
Operating Currents per memory bank
(T
A
= 0 to 70
o
C, Vdd = 3.3V
±
0.3V
(Recommended Operating Conditions unless otherwise noted)
Notes:
1. These parameters depend on the cycle rate. These values are measured at 100 MHz for -8A modules.
Input signals are changed once during tck, excepts for ICC6 and for standby currents when tck=infinity.
2. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
and BL=4 is assumed and the VDDQ current is excluded.
Parameter & Test Condition
Symb.
-8A
Note
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
ICC1
TBD
mA
mA
mA
1
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
TBD
mA
1
tck = Infinity
ICC2PS
TBD
mA
1
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
TBD
mA
1
tck = Infinity
ICC2NS
TBD
mA
1
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.)
ICC3N
TBD
mA
1
CKE<=VIL(max.)
ICC3P
TBD
mA
1
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
TBD
mA
1,2
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
TBD
mA
1
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
L-version
ICC6
TBD
mA
1
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