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| 型號： | IBM0164165P |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）) |
| 中文描述： | 4米× 16 13 / 9 EDO公司的DRAM（4米× 16動態(tài)隨機(jī)存儲器（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）） |
| 文件頁數(shù)： | 1/28頁 |
| 文件大?。?/td> | 480K |
| 代理商： | IBM0164165P |
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IBM0164165B
IBM0164165P
4M x 16 13/9 EDO DRAM
88H2012
GA14-4251-02
Revised 11/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 28
Features
4,194,304 word by 16 bit organization
Single 3.3
±
0.3V power supply
Extended Data Out (Hyper Page Mode)
CAS before RAS Refresh
- 4096 cycles/Retention Time
RAS only Refresh
- 8192 cycles/Retention Time
64ms Standard Power (SP) Retention Time
128ms Low Power (LP) Retention Time
Hidden Refresh
Self Refresh (400
μ
A) - LP Version Only
Read-Modify-Write
Dual CAS Byte Read/Write
Performance:
Max. Power Dissipation (-50)
- Active: 360mW
- Standby (SP version): 2.0 mA
- Standby (LP version): 0.2 mA
Package: TSOP-50 (400mil x 825mil)
-50
-60
t
RAC
t
CAC
RAS Access Time
50ns
60ns
CAS Access Time
13ns
15ns
t
AA
Column Address Access Time
25ns
30ns
t
RC
Cycle Time
84ns
104ns
t
HPC
EDO (Hyper Page) Mode Cycle Time
20ns
25ns
Description
The IBM0164165B/P is a dynamic RAM organized
4,194,304 words by 16 bits. This device is fabricated
in IBM’s most advanced CMOS silicon gate process
technology. The circuit and process design allow
this DRAM to achieve high performance and low
power dissipation. The IBM0164165B/P operates
with a single 3.3
±
0.3V power supply, and inter-
faces directly with eitherTTL orCMOS levels. The 22
addresses required to access any bit of data are
multiplexed (13 are strobed with RAS, 9 are strobed
with CAS). They are packaged in a 50 pin plastic
TSOP type II (400mil
×
825mil). TheIBM0164165P
parts are low power devices supporting Self Refresh
and a 128ms retention time.
Pin Assignments
(Top View)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Vcc
I/O0
I/O1
I/O2
I/O3
Vcc
I/O4
I/O5
I/O6
I/O7
NC
Vcc
WE
RAS
NC
NC
NC
NC
A0
A1
A2
A3
23
24
25
A4
A5
Vcc
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
Vss
I/O15
I/O14
I/O13
I/O12
Vss
I/O11
I/O10
I/O9
I/O8
NC
Vss
LCAS
UCAS
OE
NC
NC
A12
A11
A10
A9
A8
A7
A6
Vss
Pin Description
RAS
Row Address Strobe
LCAS / UCAS
Column Address Strobe
WE
Read/write Input
A0 - A12
Address Inputs
OE
Output Enable
I/O0 - I/O15
Data Input/output
V
CC
Power (+3.3V)
V
SS
Ground
IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO.
Discontinued (8/98 - last order; 12/98 last ship)
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