參數(shù)資料
型號： IBM0164165P
廠商： IBM Microeletronics
英文描述： 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）)
中文描述： 4米× 16 13 / 9 EDO公司的DRAM（4米× 16動態(tài)隨機存儲器（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通））
文件頁數(shù)： 10/28頁
文件大?。?/td> 480K
代理商： IBM0164165P
IBM0164165B
IBM0164165P
4M x 16 13/9 EDO DRAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 28
88H2012
GA14-4251-02
Revised 11/97
Self Refresh Cycle
- Low Power Version Only
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RASS
RAS Pulse Width
During Self Refresh Cycle
100
—
100
—
μ
s
1
t
RPS
RAS Precharge Time
During Self Refresh Cycle
84
—
104
—
ns
1
t
CHS
CAS Hold Time
During Self Refresh Cycle
-50
—
-50
—
ns
1
1. When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM operation:
If row addresses are being refreshed in an EVENLY DISTRIBUTED manner over the refresh interval using CBR refresh cycles,
then only one CBR cycle must be performed immediately after exit from Self Refresh.
If row addresses are being refreshed in any other manner (ROR- Distributed/Burst; or CBR-Burst) over the refresh interval, then a
full set of row refreshes must be performed immediately before entry to and immediately after exit from Self Refresh.
Refresh Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
CSR
CAS Setup Time
(CAS before RAS Refresh Cycle)
5
—
5
—
ns
t
CHR
CAS Hold Time
(CAS before RAS Refresh Cycle)
5
—
10
—
ns
t
WRP
WE Setup Time
(CAS before RAS Refresh Cycle)
5
—
10
—
ns
t
WRH
WE Hold Time
(CAS before RAS Refresh Cycle)
5
—
10
—
ns
t
RPC
RAS Precharge to CAS Hold Time
5
—
5
—
ns
t
REF
Refresh Period
SP version
—
64
—
64
ms
1
LP version
—
128
—
128
1. 8192 cycles for RAS Only Refresh; 4096 cycles for CBR Refresh.
Discontinued (8/98 - last order; 12/98 last ship)
相關(guān)PDF資料
PDF描述
IBM0164405B 16M x 4 13/11 EDO DRAM(16M x 4 動態(tài)RAM（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）)
IBM0164405P 16M x 4 13/11 EDO DRAM(16M x 4 動態(tài)RAM（超頁面模式并帶24條地址線，其中13條為行地址選通，11條為列地址選通）)
IBM01644F5B 16M x 8 13/11 Stacked DRAM(16M x 8 棧式動態(tài)RAM（帶24條地址線，其中13條為行地址選通，11條為列地址選通）)
IBM0165165B 4M x 16 12/10 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
IBM0165165P 4M x 16 12/10 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM0164405BT3D50 制造商:IBM 功能描述:20L9262
IBM0165165PT3C50 制造商:IBM 功能描述:75H3120
IBM0165805BJ3C50 制造商:IBM 功能描述:75H2806
IBM0165805BT3C60 制造商:IBM 功能描述:*
IBM0165805PT3C50 制造商:IBM 功能描述:75H3108
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