參數(shù)資料
型號: IC42S16400-7TIG
英文描述: 1M x 16Bit x 4 Banks (64-MBIT) SDRAM
中文描述: 100萬× 16 × 4銀行(64兆位)內(nèi)存
文件頁數(shù): 22/68頁
文件大?。?/td> 1092K
代理商: IC42S16400-7TIG
IC42S16400
22
Integrated Circuit Solution Inc.
DR034-0E 12/02/2003
Read / Write Command Interval
Read to Read Command Interval
During a read cycle when a new read command is asserted, it will be effective after the
CAS
latency, even if the previous
read operation has not completed. READ will be interrupted by another READ.
Each read command can be asserted in every clock without any restriction.
Write to Write Command Interval
During a write cycle, when a new Write command is asserted, the previous burst will terminate and the new burst will begin
with a new write command. WRITE will be interrupted by another WRITE.
Each write command can be asserted in every clock without any restriction.
READ to READ Command Interval
Burst lengh=4, CAS latency=2
CLK
Command
DQ
QA0
QB2
QB1
QB0
Read A
T0
T1
T2
T3
T4
T5
T6
T7
Hi-Z_
T8
1 cycle
QB3
Read B
Burst lengh=4, CAS latency=2
CLK
Command
DQ
QA0
QB2
QB1
QB0
Write A
T0
T1
T2
T3
T4
T5
T6
T7
Hi-Z_
T8
1 cycle
QB3
Write B
WRITE to WRITE Command Interval
相關(guān)PDF資料
PDF描述
IC42S16400 1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6BG RES 100-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
IC42S16400-6BIG 1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6T 1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6TG RES 1K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IC42S16400A-6BG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400A-6BIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400A-6T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400A-6TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM