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參數(shù)資料
| 型號： | IDT7016L20PFB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 20 ns, PQFP80 |
| 封裝： | TQFP-80 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 262K |
| 代理商： | IDT7016L20PFB |
6.13
4
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz, TQFP ONLY)
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
NOTES:
1.
This parameter is determined by device characteristics but is not produc-
tion tested.
2.
3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V .
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
R/
W
OE
SEM
I/O
0-8
H
X
X
H
High-Z
L
L
X
H
DATA
IN
L
H
L
H
DATA
OUT
X
X
H
X
High-Z
Mode
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
NOTE:
1. Condition: A
0L
— A
13L
is not equal to A
0R
— A
13R.
3190 tbl 02
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
Input High Voltage
2.2
—
6.0
(2)
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
3190 tbl 06
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
3190 tbl 05
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
CE
R/
H
H
L
Outputs
I/O
0-8
DATA
OUT
DATA
IN
—
W
OE
SEM
Mode
H
u
L
X
L
L
L
Read Semaphore Flag Data Out (I/O
0
- I/O
8
)
Write I/O
0
into Semaphore Flag
Not Allowed
X
3190 tbl 03
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +7.0
V
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125
–65 to +135
°
C
T
STG
–55 to +125
–65 to +150
°
C
I
OUT
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
3190 tbl 04
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's
(I/O
0
-I/O
8
). These eight semaphores are addressed by A
0
-A
2.
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|---|---|
| IDT7016L20PFG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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| IDT7016L20PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L20PFI | 功能描述:IC SRAM 144KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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