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參數(shù)資料
| 型號： | IDT7016L25PFB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 25 ns, PQFP80 |
| 封裝： | TQFP-80 |
| 文件頁數(shù)： | 10/20頁 |
| 文件大小： | 262K |
| 代理商： | IDT7016L25PFB |
6.13
10
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
W
CONTROLLED TIMING
(1,5,8)
R/
W
t
WC
t
HZ
t
AW
t
WR
t
AS
t
WP
DATA
OUT
(2)
t
WZ
t
DW
t
DH
t
OW
OE
ADDRESS
DATA
IN
CE
or
SEM
(6)
(4)
(4)
(3)
3190 drw 09
(7)
(9)
(7)
NOTES:
1. R/
W
or
CE
must be High during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a Low
CE
and a Low R/
W
for memory array writing cycle.
3. t
WR
is measured from the earlier of
CE
or R/
W
(or
SEM
or R/
W
) going High to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE
or
SEM
Low transition occurs simultaneously with or after the R/
W
Low transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last,
CE
or R/
W
.
7. This parameter is guaranteed by device characterization but is not production tested. Transition is measured +/-200mV from steady state with the Output
Test load (Figure 2).
8. If
OE
is Low during R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data
to be placed on the bus for the required t
DW
. If
OE
is high during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can
be as short as the specified t
WP
.
9. To access RAM,
CE
= V
IL and
SEM
= V
IH
. To access Semaphore,
CE
= V
IH
and
SEM
= V
IL.
t
EW
must be met for either condition.
3190 drw 10
t
WC
t
AS
t
WR
t
DW
t
DH
ADDRESS
DATA
IN
CE
or
SEM
R/
W
t
AW
t
EW
(3)
(2)
(6)
(9)
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
CE
CONTROLLED TIMING
(1,5)
相關(guān)PDF資料 |
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|---|---|
| IDT7016L35G | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GB | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35J | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35JB | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35PF | Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016L25PFG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L25PFGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L25PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35G | 功能描述:IC SRAM 144KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016L35GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
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