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參數(shù)資料
| 型號： | IDT7016L25PFB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 25 ns, PQFP80 |
| 封裝： | TQFP-80 |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 262K |
| 代理商： | IDT7016L25PFB |
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.13
9
IDT7016X20
IDT7016X25
IDT7016X35
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
20
15
15
0
15
2
15
—
—
—
—
—
—
—
—
12
25
20
20
0
20
2
15
—
—
—
—
—
—
—
—
15
35
30
30
0
25
2
15
—
—
—
—
—
—
—
—
20
ns
ns
ns
ns
ns
ns
ns
ns
t
DH
0
—
0
—
0
—
ns
t
WZ
t
OW
—
3
12
—
—
3
15
—
—
3
20
—
ns
ns
t
SWRD
SEM
Flag Write to Read Time
5
—
5
—
5
—
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
ns
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
IDT7016X12
Com'l. Only
Min.
IDT7016X15
Com'l. Only
Min.
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
Parameter
Max
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
12
10
10
0
10
2
10
—
—
—
—
—
—
—
15
12
12
0
12
2
10
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
t
HZ
—
10
—
10
ns
t
DH
t
WZ
0
—
—
10
0
—
—
10
ns
ns
t
OW
3
—
3
—
ns
t
SWRD
t
SPS
SEM
Flag Write to Read Time
SEM
Flag Contention Window
5
5
—
—
5
5
—
—
ns
ns
NOTES:
1. Transition is measured
±
200mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
3190 tbl 12
相關(guān)PDF資料 |
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|---|---|
| IDT7016L35G | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GB | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35J | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35JB | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35PF | Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016L25PFG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L25PFGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L25PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35G | 功能描述:IC SRAM 144KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016L35GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
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