參數(shù)資料
型號(hào)： IDT7016L25PFB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
中文描述： 16K X 9 DUAL-PORT SRAM, 25 ns, PQFP80
封裝： TQFP-80
文件頁(yè)數(shù)： 5/20頁(yè)
文件大?。?/td> 262K
代理商： IDT7016L25PFB
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.13
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7016X12 7016X15
Com'l. Only Com'l. Only
Test
Condition Version Typ.
(2)
Max. Typ.
(2)
Max.
Unit
Dynamic Operating
CE
= VIL, Outputs Open
Current
SEM
= V
IH
(Both Ports Active) f = f
MAX(3)
Symbol
I
CC
Parameter
MIL.
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
325
275
—
—
70
60
—
—
200
170
—
—
15
5
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
310
260
—
—
60
50
—
—
190
160
—
—
15
5
mA
COM’L.
I
SB1
Standby Current
CE
R
=
CE
L
= V
IH
(Both Ports — TTL
SEM
R
=
SEM
L
= V
IH
Level Inputs)
MIL.
mA
f = f
MAX(3)
COM’L.
I
SB2
Standby Current
(One Port — TTL
Level Inputs) f = f
MAX(3)
CE
"A"
=V
IL
and
CE
"B"
= V
IH(5)
MIL.
Active Port Outputs Open
mA
COM’L.
SEM
R
=
SEM
L
= V
IH
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
I
SB3
Full Standby Current
MIL.
mA
(Both Ports — All
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
COM’L.
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
CE
"A"
<
0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
>V
- 0.2V or V
<0.2V
Active Port Outputs Open,
f = f
MAX(3)
I
SB4
Full Standby Current
MIL.
S
L
—
—
—
—
—
—
—
—
mA
(One Port — All
CMOS Level Inputs)
COM'L.
S
L
100
100
180
150
100
100
170
140
NOTES:
3190 tbl 09
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and I/Os are cycling at the maximum frequency read cycle of 1/t
RC.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
7016S
7016L
Symbol
|I
LI
|
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
μ
A
μ
A
V
V
3190 tbl 08
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
—
10
—
5
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
相關(guān)PDF資料
PDF描述
IDT7016L35G HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
IDT7016L35GB Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L35J Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70
IDT7016L35JB HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
IDT7016L35PF Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016L25PFG 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L25PFGB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L25PFGI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016L35G 功能描述:IC SRAM 144KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7016L35GB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
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