參數(shù)資料
型號: IDT7024S35JB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 500V N-Channel MOSFET, UniFET; Package: TO-3P; No of Pins: 3; Container: Rail
中文描述: 4K X 16 DUAL-PORT SRAM, 35 ns, PQCC84
封裝: PLASTIC, LCC-84
文件頁數(shù): 7/20頁
文件大?。?/td> 292K
代理商: IDT7024S35JB
IDT7024S/L
HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.15
7
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(4)
IDT7024X15
Com'l. Only
Min. Max.
IDT7024X17
Com'l. Only
Min.
IDT7024X20
IDT7024X25
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
t
ABE
t
AOE
t
OH
t
LZ
Parameter
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
(3)
Byte Enable Access Time
(3)
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(1,2)
Chip Disable to Power Down Time
(1,2)
15
3
3
15
15
15
10
17
3
3
17
17
17
10
20
3
3
20
20
20
12
25
3
3
25
25
25
13
ns
ns
ns
ns
ns
ns
ns
t
HZ
t
PU
0
10
0
10
0
12
0
15
ns
ns
t
PD
15
17
20
25
ns
t
SOP
t
SAA
Semaphore Flag Update Pulse (
OE
or
SEM
) 10 —
Semaphore Address Access
(3)
10
17
10
20
10
25
ns
ns
15
IDT7024X35
IDT7024X55
IDT7024X70
Mil. Only
Min.
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
Parameter
Min.
Max.
Min.
Max.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
(3)
Byte Enable Access Time
(3)
Output Enable Access Time
35
35
35
55
55
55
70
70
70
ns
ns
ns
t
ABE
t
AOE
35
20
55
30
70
35
ns
ns
t
OH
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(1,2)
Chip Disable to Power Down Time
(1,2)
Semaphore Flag Update Pulse (
OE
or
SEM
)
Semaphore Address Access
(3)
3
3
3
ns
t
LZ
t
HZ
3
15
3
25
3
30
ns
ns
t
PU
0
0
0
ns
t
PD
t
SOP
15
35
15
50
15
50
ns
ns
t
SAA
35
55
70
ns
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns Max.
1.5V
1.5V
Figures 1 and 2
2740 tbl 12
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
,
UB
or
LB
= V
IL
, and
SEM
=V
IH
. To access semaphore,
CE
= V
IH
or
UB
&
LB
= V
IH, and
SEM
=V
IL.
4. "X" in part numbers indicates power rating (S or L).
2740 tbl 13
2740 drw 06
1250
30pF
775
5V
DATA
OUT
BUSY
INT
1250
5pF
775
5V
DATA
OUT
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
Including scope and Jig
相關(guān)PDF資料
PDF描述
IDT7024S35PF 500V N-Channel MOSFET, UniFET; Package: TT3P0; No of Pins: 3; Container: Rail
IDT7024S35PFB 500V N-Channel MOSFET, UniFET; Package: TT3P0; No of Pins: 3; Container: Rail
IDT7024S55F 500V N-Channel MOSFET, UniFET; Package: TO-3P; No of Pins: 3; Container: Rail
IDT7024S55FB 500V N-Channel MOSFET, UniFET; Package: TT3P0; No of Pins: 3; Container: Rail
IDT7024S55G HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
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