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| 型號(hào)： | IDT70V24S25G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 16 DUAL-PORT SRAM, 25 ns, CPGA84 |
| 封裝： | 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-84 |
| 文件頁(yè)數(shù)： | 4/17頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | IDT70V24S25G |
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IDT70V24S/L
HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
CAPACITANCE
(1)
(T
A
= +25
°
C, F = 1.0MHZ) TQFP ONLY
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output
Capacitance
Conditions
(2)
Max.
V
IN
= 3dV
V
OUT
= 3dV
Unit
pF
pF
9
11
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
CE
R/
W
OE
UB
LB
H
X
X
X
X
X
X
X
H
H
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
L
H
L
L
H
L
H
L
H
L
L
H
L
L
L
X
X
H
X
X
NOTE:
1. A
0L
— A
11L
≠
A
0R
— A
11R.
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
CE
R/
W
OE
UB
LB
H
H
L
X
X
X
H
L
H
H
Outputs
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
DATA
OUT
Read Both Bytes
HighZ
High-Z
SEM
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
Read Lower Byte Only
Mode
H
H
H
H
H
H
H
H
X
Deselected: Power Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Outputs Disabled
2911 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +4.6
V
T
A
0 to +70
°
C
T
BIAS
–55 to +125
°
C
T
STG
–55 to +125
°
C
I
OUT
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc +0.5V for more than 25% of the cycle time or
10ns maximum, and is limited to < 20ma for the period over V
TERM >
Vcc
+ 0.5V
.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Commercial
0
°
C to +70
°
C
2911 tbl 04
Outputs
I/O
8-15
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
DATA
OUT
DATA
OUT
Read Data in Semaphore Flag
SEM
I/O
0-7
Mode
L
L
H
X
X
X
L
DATA
IN
DATA
IN
Write D
IN0
into Semaphore Flag
X
L
L
X
X
X
H
L
X
H
X
L
L
L
L
DATA
IN
—
—
DATA
IN
—
—
Write D
IN0
into Semaphore Flag
Not Allowed
Not Allowed
X
X
2911 tbl 03
GND
0V
V
CC
3.3V
±
0.3
2911 tbl 05
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
—
—
Max.
3.6
0
Vcc+0.3 V
0.8
Unit
V
V
V
NOTES:
1. V
IL
≥
-1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2911 tbl 06
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all of the I/O's (I/O
0
- I/O
15
). These eight semaphores are addressed by A
0
- A
2
.
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