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參數(shù)資料
| 型號： | IDT7164L30TP |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 8347 PBGA NO-PB W/O ENCR |
| 中文描述： | 8K X 8 STANDARD SRAM, 30 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | IDT7164L30TP |
6.1
3
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7164S15
7164L15
Com’l.
110
7164S20
7164L20
Com’l.
100
7164S25
7164L25
Com’l.
90
7164S30
7164L30
Com’l.
—
Symbol
I
CC1
Parameter
Power
S
Mil.
—
Mil.
110
Mil.
110
Mil.
100
Unit
mA
Operating Power Supply
Current,
CS
1
= V
IL
, CS
2
= V
IH
,
Outputs Open, V
CC
= Max., f = 0
(3)
Dynamic Operating Current
CS
1
= V
IL
, CS
2
= V
IH
,
Outputs Open, V
CC
= Max., f = f
MAX
(3)
Standby Power Supply Current
(TTL Level),
CS
1
≥
V
IH
or CS
2
≤
V
IL
V
CC
= Max., Outputs Open, f = f
MAX
(3)
Full Standby Power Supply Current
(CMOS Level), f = 0
(3)
, V
CC
= Max.
1.
CS
1
≥
V
HC
and CS
2
≥
V
HC
, or
2. CS
2
≤
V
LC
L
S
100
180
—
—
90
170
100
180
80
170
100
180
—
—
90
170
I
CC2
mA
L
S
150
20
—
—
150
20
160
20
150
20
160
20
—
—
150
20
I
SB
mA
L
S
3
15
—
—
3
15
5
20
3
15
5
20
—
—
5
20
I
SB1
mA
L
0.2
—
0.2
1
0.2
1
—
1
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input Capacitance
C
I/O
I/O Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
2967 tbl 06
DC ELECTRICAL CHARACTERISTICS
(1)
(Continued)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7164S35
7164L35
Com’l.
7164S45
7164L45
Com’l.
7164S55
7164L55
Com’l.
7164S70
(2)
/85
(4)
7164L70
(2)
/85
(4)
Com’l.
Symbol
Parameter
Power
Mil.
Mil.
Mil.
Mil.
Unit
I
CC1
Operating Power Supply
Current,
CS
1
= V
IL
, CS
2
= V
IH
,
Outputs Open, V
CC
= Max., f = 0
(3)
S
90
100
—
100
—
100
90
100
mA
L
80
90
—
90
—
90
80
90
I
CC2
Dynamic Operating Current
CS
1
= V
IL
, CS
2
= V
IH
,
Outputs Open, V
CC
= Max., f = f
MAX(3)
S
150
160
—
160
—
160
150
160
mA
L
130
140
—
130
—
125
130
120
I
SB
Standby Power Supply Current
(TTL Level),
CS
1
≥
V
IH
, or CS
2
≤
V
IL
V
CC
= Max., Outputs Open, f = f
MAX(3)
S
20
20
—
20
—
20
20
20
mA
L
3
5
—
5
—
5
3
5
I
SB1
Full Standby Power Supply Current
(CMOS Level), f = 0
(3)
, V
CC
= Max.
1.
CS
1
≥
V
HC
and CS
2
≥
V
HC
, or
2. CS
2
≤
V
LC
S
15
20
—
20
—
20
15
20
mA
L
0.2
1
—
1
—
1
0.2
1
NOTES:
1. All values are maximum guaranteed values.
2. 70 ns available in both military and commercial devices.
3. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing.
4. Also available: 100ns military devices.
2967 tbl 07
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7164L35DB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35P | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7164L35TCB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 8Kx8, 28 Pin, Ceramic, DIP |
| IDT7164L35TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35Y | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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