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參數(shù)資料
| 型號： | IDT7164L30TP |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 8347 PBGA NO-PB W/O ENCR |
| 中文描述： | 8K X 8 STANDARD SRAM, 30 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 104K |
| 代理商： | IDT7164L30TP |
6.1
4
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%)
IDT7164S
Min.
IDT7164L
Min.
Symbol
Parameter
Test Condition
Max.
Max.
Unit
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
= GND to V
CC
MIL.
COM’L.
—
—
10
5
—
—
5
2
μ
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS
1
= V
IH,
V
OUT
= GND to V
CC
MIL.
COM’L.
—
—
10
5
—
—
5
2
μ
A
V
OL
Output Low Voltage
I
OL
= 8mA, V
CC
= Min.
I
OL
= 10mA, V
CC
= Min.
0.4
0.5
—
—
0.4
0.5
V
—
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
2.4
—
2.4
—
V
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2967 tbl 10
*Includes scope and jig capacitances
Figure 2. AC Test Load
(for t
CLZ1,
t
CLZ2
, t
OLZ
, t
CHZ1,
t
CHZ2
, t
OHZ
, t
OW
, and t
WHZ
)
Figure 1. AC Test Load
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) (V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol
V
DR
I
CCDR
Parameter
Test Condition
Min.
2.0
—
—
0
2.0v
—
10
10
—
3.0V
—
15
15
—
2.0V
—
200
60
—
3.0V
—
300
90
—
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
—
MIL.
COM’L.
t
CDR(3)
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
1.
CS
1
≥
V
HC
CS
2
≥
V
HC
, or
2. CS
2
≤
V
LC
ns
t
R(3)
|I
LI
|
(3)
t
RC(2)
—
—
—
—
—
—
2
—
2
ns
μ
A
NOTES:
1. T
A
= +25
°
C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
2967 tbl 09
2967 drw 03
480
30pF*
255
DATA
OUT
5V
2967 drw 04
480
5pF*
255
DATA
OUT
5V
2967 tbl 08
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IDT7164L35DB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35P | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7164L35TCB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 8Kx8, 28 Pin, Ceramic, DIP |
| IDT7164L35TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164L35Y | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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