參數(shù)資料
型號(hào): IDT7198L
廠商: Integrated Device Technology, Inc.
英文描述: Current-Mode PWM Controller 8-SOIC -40 to 85
中文描述: 64K的的CMOS靜態(tài)RAM(16K的× 4位)新增芯片選擇和輸出控制
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 80K
代理商: IDT7198L
6.4
3
IDT7198S/L
CMOS STATIC RAMS 64K (16K x 4-BIT) Added Chip Select and Output Enable Controls
MILITARY TEMPERATURE RANGE
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input High Voltage
2.2
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
0.8
V
NOTE:
1. V
IL
(min.) = -3.0V for pulse width less than 20ns, once per cycle.
2985 tbl 05
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Ambient Temperature
GND
V
CC
Military
–55
°
C to +125
°
C
0V
5V
±
10%
2985 tbl 06
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz, V
CC
= 0V)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
7
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
7
pF
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
2985 tbl 04
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%, Military Temperature Range Only
IDT7198S
Min.
IDT7198L
Min.
Symbol
Parameter
Test Condition
Max.
Max.
Unit
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
= GND to V
CC
10
5
μ
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH,
V
OUT
= GND to V
CC
10
5
μ
A
V
OL
Output Low Voltage
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
0.5
0.4
0.5
0.4
V
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
2.4
2.4
V
2985 tbl 07
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ1, 2
, t
OLZ
, t
CHZ1, 2
, t
OHZ
, t
OW
and t
WHZ
)
*Includes scope and jig capacitances
2985 drw 06
480
5pF*
255
DATA
OUT
5V
2985 drw 05
480
30pF*
255
DATA
OUT
5V
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2985 tbl 10
相關(guān)PDF資料
PDF描述
IDT7198S High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85
IDT71P71804 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71604167BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71604200BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71604250BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7198S35P 制造商:Integrated Device Technology Inc 功能描述:
IDT7198S85LB 制造商:IDT 功能描述:IC
IDT71B74S15TP 制造商:Integrated Device Technology Inc 功能描述:CACHE-TAG RAM, 8KX8, 28 Pin, Plastic, DIP
IDT71B74S15Y 制造商:IDT 9532 功能描述:CACHE-TAG RAM, 8KX8, 28 Pin, Plastic, SOJ 制造商:Integrated Device Technology Inc 功能描述:CACHE-TAG RAM, 8KX8, 28 Pin, Plastic, SOJ
IDT71P71604S167BQ 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ