IDT72V3612 3.3V, CMOS SyncBiFIFOTM 64 x 36 x 2 COMMERCIALTEMPERATURERANGE SWITCHING CHARACTERISTICS O" />
參數(shù)資料
型號: IDT72V3612L20PF8
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 23/24頁
文件大?。?/td> 0K
描述: IC FIFO 64X36X2 20NS 120QFP
標準包裝: 750
系列: 72V
功能: 異步
存儲容量: 4.6K(64 x 36 x2)
數(shù)據(jù)速率: 50MHz
訪問時間: 20ns
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 120-LQFP
供應(yīng)商設(shè)備封裝: 120-TQFP(14x14)
包裝: 帶卷 (TR)
其它名稱: 72V3612L20PF8
8
IDT72V3612 3.3V, CMOS SyncBiFIFOTM
64 x 36 x 2
COMMERCIALTEMPERATURERANGE
SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF
SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE, CL = 30pF
IDT72V3612L12
IDT72V3612L15
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tA
Access Time, CLKA
↑ to A0-A35 and CLKB↑ to B0-B35
1
8
2
10
ns
tWFF
Propagation Delay Time, CLKA
↑ to FFA and CLKB↑ to FFB
182
10
ns
tREF
Propagation Delay Time, CLKA
↑ to EFA and CLKB↑ to EFB
182
10
ns
tPAE
Propagation Delay Time, CLKA
↑ to AEA and CLKB↑ to AEB
182
10
ns
tPAF
Propagation Delay Time, CLKA
↑ to AFA and CLKB↑ to AFB
182
10
ns
tPMF
Propagation Delay Time, CLKA
↑ to MBF1 LOW or MBF2 HIGH and
1819
ns
CLKB
↑ to MBF2 LOW or MBF1 HIGH
tPMR
Propagation Delay Time, CLKA
↑ to B0-B35(1)and CLKB↑ to A0-A35(2)
282
10
ns
tMDV
Propagation Delay Time, MBA to A0-A35 valid and MBB to B0-B35 valid
1
8
1
10
ns
tPDPE
Propagation Delay Time, A0-A35 valid to PEFA valid; B0-B35 valid to
2
8
2
10
ns
PEFB valid
tPOPE
Propagation Delay Time, ODD/EVEN to PEFA and PEFB
282
10
ns
tPOPB(3)
Propagation Delay Time, ODD/EVEN to parity bits (A8, A17, A26, A35)
2
8
2
10
ns
and (B8, B17, B26, B35)
tPEPE
Propagation Delay Time, W/RA, CSA, ENA, MBA or PGA to PEFA;
181
10
ns
W/RB, CSB, ENB. MBB, PGB to PEFB
tPEPB(3)
Propagation Delay Time, W/RA, CSA, ENA, MBA or PGA to parity bits
2
8
2
10
ns
(A8, A17, A26, A35); W/RB, CSB, ENB. MBB or PGB to parity bits
(B8, B17, B26, B35)
tRSF
Propagation Delay Time, RST to (AEA, AEB) LOW and (AFA, AFB,1
10
1
15
ns
MBF1, MBF2) HIGH
tEN
Enable Time, CSA and W/RA LOW to A0-A35 active and CSB LOW and
2
6
2
10
ns
W/RB HIGH to B0-B35 active
tDIS
Disable Time, CSA or W/RA HIGH to A0-A35 at high-impedance and
1618
ns
CSB HIGH or W/RB LOW to B0-B35 at high impedance
NOTES:
1. Writing data to the mail1 register when the B0-B35 outputs are active and MBB is HIGH.
2. Writing data to the mail2 register when the A0-A35 outputs are active and MBA is HIGH.
3. Only applies when reading data from a mail register.
Commercial: Vcc=3.3V± 0.30V; for 12ns (83MHz) operation, Vcc=3.3V ±0.15V; TA = 0
°C to +70°C; JEDEC JESD8-A compliant
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